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october 2015 docid027429 rev 5 1 / 20 this is information on a product in full production. www.st.com STGB10M65DF2 trench gate field - stop igbt, m series 650 v, 10 a low loss datasheet - production data figure 1 : internal schematic diagram features ? 6 s of short - circuit withstand time ? v ce(sat) = 1.55 v (typ.) @ i c = 10 a ? tight parameter distribution ? safer paralleling ? low thermal resistance ? soft and very fast recovery antiparallel diode applications ? motor control ? ups ? pfc description this device is an igbt developed using an advanced proprietary trench gate field - stop structure. the device is part of the m series of igbts, which represents an optimum compromise in performance to maximize the efficiency of inverter systems where low loss and short - circuit capability are essential. furthermore, a positive v ce(sat) tempera ture coefficient and tight parameter distribution result in safer paralleling operation. table 1: device summary order code marking package packing STGB10M65DF2 g10m 65df2 d2pak tape and reel 1 3 tab d 2 pak
contents STGB10M65DF2 2 / 20 docid027429 rev 5 contents 1 electrical ratings ................................ ................................ ............. 3 2 electrical characteristics ................................ ................................ 4 2.1 electrical characteri stics (curves) ................................ ...................... 7 3 test circuits ................................ ................................ ................... 13 4 package information ................................ ................................ ..... 14 4.1 d2pak package information ................................ ............................ 14 4.2 d2pak packing information ................................ ............................. 17 5 revision history ................................ ................................ ............ 19
STGB10M65DF2 electrical ratings docid027429 rev 5 3 / 20 1 electrical ratings table 2: absolute maximum ratings symbol parameter value unit v ces collector - emitter voltage (v ge = 0) 650 v i c continuous collector current at t c = 25 c 20 a continuous collector current at t c = 100 c 10 i cp (1) pulsed collector current 40 a v ge gate - emitter voltage 20 v i f continuous forward current at t c = 2 5 c 20 a continuous forward current at t c = 100 c 10 i fp (1) pulsed forward current 40 a p tot total dissipation at t c = 25 c 115 w t stg storage temperature range - 55 to 150 c t j operating junction temperature - 55 to 175 notes: (1) pulse width limited by maximum junction temperature. table 3: thermal data symbol parameter value unit r thjc thermal resistance junction - case igbt 1.3 c/w r thjc thermal resistance junction - case diode 2.08 r thja thermal resista nce junction - ambient 62.5
electrical characteristics STGB10M65DF2 4 / 20 docid027429 rev 5 2 electrical characteristics t c = 25 c unless otherwise specified table 4: static characteristics symbol parameter test conditions min. typ. max. unit v (br)ces collector - emitter breakdown voltage v ge = 0 v, i c = 2 ma 650 v v ce(sat) collector - emitter saturation voltage v ge = 15 v, i c = 10 a 1.55 2.0 v v ge = 15 v, i c = 10 a, t j = 125 c 1.9 v ge = 15 v, i c = 10 a, t j = 175 c 2.1 v f forward on - voltage i f = 10 a 1.5 v i f = 10 a, t j = 125 c 1.3 i f = 10 a, t j = 175 c 1.2 v ge(th) gate threshold voltage v ce = v ge , i c = 250 a 5 6 7 v i ces collector cut - off current v ge = 0 v, v ce = 650 v 25 a i ges gate - em itter leakage current v ce = 0 v, v ge = 20 v 250 a table 5: dynamic characteristics symbol parameter test conditions min. typ. max. unit c ies input capacitance v ce = 25 v, f = 1 mhz, v ge = 0 v - 840 - pf c oes output capacitance - 63 - c res revers e transfer capacitance - 16 - q g total gate charge v cc = 520 v, i c = 10 a, v ge = 15 v (see figure 30: " gate charge test circuit" ) - 28 - nc q ge gate - emitter charge - 6 - q gc gate - collector charge - 12 - table 6 : igbt switching characteristics (inductive load) symbol parameter test conditions min. typ. max. unit t d(on) turn - on delay time v ce = 400 v, i c = 10 a, v ge = 15 v, r g = 22 (see figure 29: " test circuit for inductive lo ad switching" ) - 19 - ns t r current rise time - 7.4 - ns (di/dt) on turn - on current slope - 1086 - a/s t d(off) turn - off - delay time - 91 - ns
STGB10M65DF2 electrical characteristics docid027429 rev 5 5 / 20 symbol parameter test conditions min. typ. max. unit t f current fall time - 92 - ns e on (1) turn - on switching losses - 0.12 - mj e off (2) turn - off switching losses - 0.27 - mj e ts total switching losses - 0.39 - mj t d(on) turn - on delay time v ce = 400 v, i c = 10 a, v ge = 15 v, r g = 22 t j = 175 c (see figure 29: " test circuit for inductive load switching" ) - 18 - ns t r current rise time - 9 - ns (di/dt) on turn - on current slope - 890 - a/s t d(off) turn - off - delay time - 90 - ns t f current fall time - 170 - ns e on turn - on switching losses - 0.26 - mj e off turn - off switching losses - 0.4 - mj e ts total switching losses - 0.66 - mj t sc short - circuit withstand time v cc 400 v, v ge = 15 v, t jstart = 150 c 6 - s notes: (1) energy losses include reverse recovery of the diode. (2) turn - off losses also include the tail of the collector current. table 7: diode switching characteristics (inductive load) symbol parameter t est conditions min. typ. max. unit t rr reverse recovery time i f = 10 a, v r = 400 v, v ge = 15 v (see figure 29: " test circuit for inductive load switching" ) di/dt = 1000 a/s - 96 ns q rr reverse recovery charge - 373 nc i rrm reverse recovery current - 13 a di rr /dt peak rate of fall of reverse recovery current during t b - 661 a/s
electrical characteristics STGB10M65DF2 6 / 20 docid027429 rev 5 symbol parameter t est conditions min. typ. max. unit e rr reverse recovery energy - 52 j t rr reverse recovery time i f = 10 a, v r = 400 v, v ge = 15 v t j = 175 c (see figure 29: " test circuit for inductive load switching" ) di/dt = 1000 a/s - 201 ns q rr reverse recovery charge - 1352 nc i rrm reverse recovery current - 19 a di rr /dt peak rate of fall of reverse recovery current during t b - 405 a /s e rr reverse recovery energy - 150 j
STGB10M65DF2 electrical characteristics docid027429 rev 5 7 / 20 2.1 electrical characteristics (curves) figure 2 : power dissipation vs. case temper ature figure 3 : collector current vs. case temperature figure 4 : output characteristics (t j = 25 c) figure 5 : output characteristics (t j = 175 c) figure 6 : v ce(sat ) vs. junction temperature figure 7 : v ce(sat) vs. collector current
electrical characteristics STGB10M65DF2 8 / 20 docid027429 rev 5 figure 8 : collector current vs. switching frequency figure 9 : forward bias safe ope rating area figure 10 : transfer characteristics figure 11 : diode v f vs. forward current figure 12 : normalized v ge(th) vs. junction temperature figure 13 : normalized v (br)ces vs. junction temperature
STGB10M65DF2 electrical characteristics docid027429 rev 5 9 / 20 figure 14 : capacitance variations figure 15 : gate charge vs. gate - emitter voltage figure 16 : switching loss vs. col lector current figure 17 : switching loss vs. gate resistance figure 18 : switching loss vs. temperature figure 19 : switching loss vs. collector emitter voltage
electrical characteristics STGB10M65DF2 10 / 20 docid027429 rev 5 figure 20 : short - circuit time and current vs. v ge figure 21 : switching times vs. collector current figure 22 : switching times vs. gate resistance figure 23 : r everse recovery current vs. diode current slope figure 24 : reverse recovery time vs. diode current slope figure 25 : reverse recovery charge vs. diode current slope
STGB10M65DF2 electrical characteristics docid027429 rev 5 11 / 20 figure 26 : reverse recovery energy vs. diode current slope figure 27 : thermal impedance for igbt 10 -5 10 -4 10 -3 10 -2 10 -1 t p (s) 10 -2 10 -1 k 0.2 0.05 0.02 0.01 0.1 zth=k rthj-c =tp/t tp t single pulse =0.5 zth t o2t_b
electrical characteristics STGB10M65DF2 12 / 20 docid027429 rev 5 figure 28 : thermal impedance for diode
STGB10M65DF2 test circuits docid027429 rev 5 13 / 20 3 test circuits figure 29 : test circuit for inductive load switching figure 30 : gate charge test circuit figure 31 : switching waveform figure 32 : diode reverse recovery waveform am01505v1 v i v gmax p w i g =cons t v cc 12 v 47 k 1 k 100 2.7 k 47 k 1 k 2200 f d.u. t . 100 nf v g t am01507v1 10% v rrm dv/dt di/dt i rrm i f t rr t s t f q rr i rrm a a c e g b r g + - g c 3 . 3 f 1 0 0 0 f l = 1 00 f v cc e d . u . t b a m 0 15 0 4 v 1
package information STGB10M65DF2 14 / 20 docid027429 rev 5 4 package information in order to meet environmental requirements, st offers these devices in different grades of ecopa ck ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark. 4.1 d2pak package information figure 33 : d2pak (to - 263) type a package outline 0079457_a_rev22
STGB10M65DF2 package information docid027429 rev 5 15 / 20 table 8: d2pak (to - 263) type a package mechanical data dim. mm min. typ. max. a 4.40 4.60 a1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 d 8.95 9.35 d1 7.50 7.75 8.00 d2 1.10 1.30 1.50 e 10 10.40 e1 8.50 8.70 8.90 e2 6.85 7.05 7.25 e 2.54 e1 4.88 5.28 h 15 15.85 j1 2.49 2.69 l 2.29 2.79 l1 1.27 1.40 l2 1.30 1.75 r 0.4 v2 0 8
pac kage information STGB10M65DF2 16 / 20 docid027429 rev 5 figure 34 : d2pak (to - 263) recommended footprint (dimensions are in mm)
STGB10M65DF2 package information docid027429 rev 5 17 / 20 4.2 d2pak packing information figure 35 : tape outline
package information STGB10M65DF2 18 / 20 docid027429 rev 5 figure 36 : reel outline table 9: d2pak tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 10.5 10.7 a 330 b0 15.7 15.9 b 1.5 d 1.5 1.6 c 12.8 13.2 d1 1.59 1.61 d 20.2 e 1.65 1.85 g 24.4 26. 4 f 11.4 11.6 n 100 k0 4.8 5.0 t 30.4 p0 3.9 4.1 p1 11.9 12.1 base q uanti ty 1000 p2 1.9 2.1 bulk q uanti ty 1000 r 50 t 0.25 0.35 w 23.7 24.3
STGB10M65DF2 revision history docid027429 rev 5 19 / 20 5 revision history table 10: document revision history date revision changes 10 - feb - 2015 1 first release. 23 - apr - 2015 2 minor text edits throughout document in section 2 electrical characteristics: - updated table 4: static characteristics - updated table 5: dynamic c haracteristics - updated table 6: igbt switching characteristics (inductive load) - updated table 7: diode switching characteristics (inductive load) added section 2.1 electrical characteristics (curves) 11 - jun - 2015 3 document status promoted from prelimi nary to production data. 31 - jul - 2015 4 updated table titled: "diode switching characteristics (inductive load)". 20 - oct - 2015 5 updated table 5: "dynamic characteristics" and table 6: "igbt switching characteristics (inductive load)" . updated figure 8: "collector current vs. switching frequency" .
STGB10M65DF2 20 / 20 docid027429 rev 5 important notice C please read carefully stmicroelectronics nv and its subsidiaries (st) reserve the right to make changes, corrections, enhancements, modifications , and improvements to st products and/or to this document at any time without notice. purchasers should obtain the lat est relevant information on st products before placing orders. st products are sold pursuant to sts terms and conditions of sale in place at the time of or der acknowledgement. purchasers are solely responsible for the choice, selection, and use of st p roducts and st assumes no liability for application assistance or the design of purchasers products. no license, express or implied, to any intellectual property right is granted by st herein. resale of st products with provisions different from the i nformation set forth herein shall void any warranty granted by st for such product. st and the st logo are trademarks of st. all other product or service names are the property of their respective owners. information in this document supersedes and rep laces information previously supplied in any prior versions of this document. ? 2015 stmicroelectronics C all rights reserved

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